Semiconductor device and method of manufacturing the same

ABSTRACT

A semiconductor device is disclosed, which comprises trench type device isolation regions formed in a semiconductor substrate, semiconductor active regions electrically isolated by the isolation regions, a first electrode layer formed to self-align to the isolation regions, and a second electrode layer formed over the first electrode layer with an insulating film interposed therebetween, the top of each of the isolation regions being located, in an area where the second electrode layer is present, at a first level below the top of the first electrode layer and above the surface of the active regions and, in an area where the second electrode layer is not present, at a second level below the first level, and the surface of the active regions being at substantially the same level in the area where the second electrode layer is present and in the area where the second electrode layer is not present.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is based upon and claims the benefit of priorityfrom the prior Japanese Patent Application No. 2001-267676, filed Sep.4, 2001, the entire contents of which are incorporated herein byreference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a semiconductor device havingtrench type device isolation regions and a method of manufacturing thesemiconductor device. More specifically, the present invention relatesto the structure of trench type device isolation regions of asemiconductor device having semiconductor active regions self-aligned toelectrode layers and a method of formation thereof. The presentinvention is applied, for example, to a nonvolatile memory having atwo-layer (stacked) gate structure in which the floating gate isself-aligned to a device isolation region.

[0004] 2. Description of the Related Art

[0005] As a nonvolatile semiconductor storage device that iselectrically re-programmable which is adapted for high packing densityand large capacity, a flash memory is well known. The flash memory hasan array of memory cells of the MOS transistor structure in which twogate electrode layers are stacked; a charge storage layer (floating gateelectrode) and a control gate electrode layer.

[0006] In the memory cell array of a NAND type flash memory, a pluralityof memory cells are series-connected with the source of one cell used asthe drain of the adjacent one, thereby forming a NAND configuration witha series of memory cells. Select transistors are placed at both ends ofeach NAND series. The source or drain of one select transistor isconnected to a bit line through a bit line contact, while the source ordrain of the other select transistor is connected to a source linethrough a source line contact.

[0007] In manufacturing such a NAND type flash memory, a gatepreformation process may be used. This process involves forming a gateoxide over the entire surface of a silicon substrate (including thememory cell area and the peripheral circuit area), depositing apolysilicon film which will serve as floating gates of memory cells(cell transistors), patterning the deposited polysilicon film to formfloating gate electrodes, and forming an insulating film for trench typedevice isolation regions to self-align to the floating gate electrodes.

[0008] At least part of a number of peripheral transistors that make upperipheral circuits of memory cells (for example, the selecttransistors) may be formed into the stacked gate structure which, likethe memory cells, comprises a charge storage layer and a control gatelayer. In this case, the gates of transistors of the same gate structurein the memory cell area and the peripheral circuit area can be processedunder the same etching conditions, allowing the processing steps to bereduced and the processing processes to be made common to each other.

[0009]FIGS. 18A, 18B and 18C are sectional views, at a stage ofmanufacture, of a conventional NAND type flash memory. Morespecifically, FIGS. 18A and 18B are sectional views of the stacked gatestructure of memory cells in the direction of gate width W (in thedirection of word lines) and in the direction of gate length L,respectively, and FIG. 18B is a sectional view of a peripheraltransistor in the direction of gate length L. FIGS. 19A, 19B and 19Cthrough FIGS. 22A, 22B and 22C are sectional views, at subsequent stagesof manufacture, of the same portions of the conventional NAND type flashmemory as in FIGS. 18A, 18B and 18C, respectively.

[0010] First, as shown in FIGS. 18A, 18B and 18C, a first insulatingfilm 11 is formed over the entire surface of a semiconductor substrate(Si substrate) 10. A first layer 13 a (lower layer) of polysilicon forfloating gate electrode is then formed on the first insulating film 11.

[0011] Next, device isolation trenches are formed to self-align to thefloating gate electrodes 13 a and an insulating film is deposited tofill the device isolation trenches. After that, the deposited insulatingfilm is smoothed until the surface of the first floating gate electrodelayer 13 a is exposed, thereby forming device isolation regions 30. Inthis case, the top of the device isolation regions 30 is at a levelabove the Si substrate surface. That is, a step exists between the topof the device isolation region 30 and the Si substrate surface.

[0012] Next, a floating gate electrode layer 13 b as a second layerconsisting of polysilicon is formed over the entire surface and thenpatterned by means of lithographic and etching techniques. In this case,the second floating gate electrode layer 13 b is stacked on the firstfloating gate electrode layer 13 a and patterned to overlap the deviceisolation regions 30.

[0013] Next, a second insulating film 12 is formed over the entiresurface of the substrate. A control gate electrode layer 14 is formed onthe second insulating film 12 and then formed on top with a gate maskingmaterial layer 31.

[0014] Next, as shown in FIGS. 19A, 19B and 19C, the gate maskingmaterial layer 31 is patterned to form a gate masking pattern 31.

[0015] Next, as shown in FIGS. 20A, 20B and 20C, the control gateelectrode layer 14 is etched using the gate masking pattern 31 as amask.

[0016] Next, as shown in FIGS. 21A, 21B and 21C, the second insulatingfilm 12 is etched using the gate masking pattern 31 as a mask.

[0017] Next, as shown in FIGS. 22A, 22B and 22C, the second floatinggate electrode layer 13 b and the first floating gate electrode layer 13a are etched using the gate masking pattern 31 as a mask. Thereby, thestacked gate structure is obtained in which the floating gate electrode13 in the form of two layers and the control gate electrode 14 arestacked. In this stage, a two-layer gate structure which is the same asthat shown in FIG. 18A is left below the word lines in the direction ofgate width W in the memory cell area. Also, in this state, the top ofthe device isolation regions 30 is above the Si substrate surface level.That is, a step is formed between the top of the device isolation region30 and the Si substrate surface.

[0018] After that, the stacked gates are covered with a capping materialand then an interlayer insulating film is formed over the entiresubstrate of the substrate. Next, contact windows are formed in theinterlayer insulating film and an interconnect layer is then formed.

[0019] In forming the interlayer insulating film, a BPSG film in whichimpurities, such as boron or phosphorus, are mixed into a silicondioxide film to increase melting performance is deposited and thenplanarized by means of CMP. After that, contact windows are formed inthe interlayer insulating film by dry etching. In this case, unless theetch selectivity between the capping material and the interlayerinsulating film is high, the capping material on the gates will also beetched to reduce the thickness or removed thoroughly to expose thegates. Then, in filling the contact material into the contact windows,failures may occur in which the gates and the contact material areshort-circuited. Thus, as the capping material use is made of a siliconnitride-based film which has relatively high etch selectivity to thesilicon dioxide-based interlayer insulating film.

[0020] In the structure of FIGS. 22A-22C realized by the gatepreformation process, the device isolation insulating film 30 is formedto self-align to the sidewall of the floating gate electrodes 13 a andits top is above the Si substrate surface level. That is, the activeregions in the Si substrate are surrounded by the device isolationinsulating film 30 whose top is above the surface level of the activeregions.

[0021] However, it has become clear that such a structure as describedabove causes various problems as device dimensions are scaled down.

[0022] In many cases, as a contact window etching stopper a siliconnitride film is deposited on the substrate surface so as to preventcontact windows from being formed too deep in those portions of theinterlayer insulating film formed over the entire surface after theformation of stacked gates which are located over the source/drainregions of memory cells. That is, the etching of the interlayerinsulating film stops at this silicon nitride film. The silicon nitridefilm is then etched in a short time under silicon nitride etchingconditions.

[0023] However, as the source/drain regions of memory cells are scaleddown, it becomes very difficult to form openings in the silicon nitridefilm formed on the surface of source/drain active regions which aresurrounded by the device isolation regions to form trenches, since thesilicon nitride film is buried on the surface of source/drain activeregions. Even though it is not so difficult, a contact barrier film(SiN) is formed on sidewalls of the device isolation regions with theresult that the thickness of the silicon nitride film on sidewallsincreases, resulting in failure to remove the sidewall silicon nitridefilm at the time of formation of contact windows (the silicon nitridefilm is left as sidewall spacers). Thus, the contact area is reduced andthe contact resistance is increased.

[0024] As a measure for this problem, in Japanese Patent Application No.2000-245029 assigned to the same assignee as this application, aproposal has been made for a structure which allows the device isolationinsulating film to be reduced in step height by etching the deviceisolation insulating film and the gate insulating film on the substratesurface after the formation of the floating gate electrodes.

[0025] According to such a structure, it becomes possible to minimizethe problem that the contact barrier film is formed on the sidewall ofthe device isolation insulating film when the contact windows are formedon the source/drain regions of memory cells by means of RIE or thesilicon nitride film is buried on the top of the source/drain activeregions.

[0026] However, even with the structure in which the step height of thedevice isolation insulating film is reduced by etching the deviceisolation insulating film and the gate insulating film on the substratesurface after the formation of the floating gate electrodes, it hasbecome clear that a problem still remains.

[0027] First, in etching the device isolation insulating film by RIEafter the formation of the floating gate electrode, the gate insulatingfilm on the source/drain regions would also etched away, causing the Sisubstrate to undergo etching.

[0028] Normally, use is made of etching conditions in which the etchrate of the device isolation insulating film (silicon oxide film) ishigh, whereas the etch rate of the Si substrate is low; nevertheless,the Si substrate would be subjected to etching to some extent and thesubstrate surface level would be lowered.

[0029] As a result, the depth of the source/drain regions equivalentlyincreases by the amount that the substrate surface level is lowered,leading to the short-channel effect and performance degradation of thememory cells and transistors. This is important in view of a requirementof making the depth of the source/drain regions of memory cells andtransistors from the gate oxide surface as small as possible as devicedimensions are scaled down..

[0030] Furthermore, when the Si substrate is subjected to etching underetching conditions for the device isolation insulating film (siliconoxide film), an element, such as carbon, is driven as impurities intothe Si substrate or the Si substrate is damaged by etching plasma. Thiswill result in problems of degradation in the quality of a post-oxidefilm to be formed later, the occurrence of junction leakage current insource/drain diffused regions, and the occurrence of defective crystal.

[0031] When the active regions (device regions) in the Si substrate aresurrounded by higher device isolation insulating film, it becomesimpossible to etch away the gate material layer on the sidewall of thedevice isolation insulating film. That is, the gate material is left.

[0032] In this case, as the ratio between the opening of the portionsurrounded by the device isolation insulating film and the depth to thedevice region (active region aspect ratio) increases, it becomes moredifficult for an etching gas to flow into that portion and hence thegate material becomes more easy to be left.

[0033] The remaining gate material would cause gate electrodes to beshort-circuited. In many cases, etching under conditions that the gateoxide film is small in thickness and a reduction in the thickness of thegate oxide film should be minimized during etching of the gate layermakes it easier for the gate material to be left.

[0034] To scale down the dimensions of memory cells, a structure ofmemory cells and peripheral transistors has been proposed in JapanesePatent Application No. 2000-291910 assigned to the same assignee as thisapplication. According to this structure, a floating gate electrode ofone layer structure (first electrode layer) is formed and a deviceisolation region is formed to self-align to the first electrode layer.

[0035]FIG. 23 shows, in sectional view, the memory cell area and theperipheral circuit area of a semiconductor device disclosed in JapanesePatent Application No. 2000-291910.

[0036] The memory cell area comprises a semiconductor substrate 11,device isolation regions 15 that isolate device regions 10 in thesubstrate, a first electrode layer (floating gate electrodes) 13 formedover the device regions 10 with a first insulating film 12 interposedtherebetween, a second insulating film 16 formed on the first electrodelayer 13 and the device isolation regions 15, and a second electrodelayer (control gate electrode) 18 formed on the second insulating film16. The top of the device isolation regions 15 is below the surfacelevel of the first electrode layer 13.

[0037] The method of manufacture of the semiconductor device of FIG. 23will be described next.

[0038] First, the first insulating film 51 is formed over the surface ofthe substrate 50. The floating gate electrodes 53 are formed on thefirst insulating film 51. The device isolation trenches are formed inthe substrate to self-align to the floating gate electrodes 53. Aninsulating film is deposited over the entire surface of the substrate tofill the device isolation trenches. The insulating film is planarizeduntil the top of the floating gate electrodes 53 is exposed, therebyforming the device isolation regions 60.

[0039] Next, the upper portion of each device isolation region isremoved until the top of the device isolation region 30 in the memorycell area is located below the top of the floating gate electrodes 53.After that, the second insulating film (a composite insulating filmincluding a silicon nitride film is desired; for example, an ONO film)52 is formed over the entire surface of the substrate. A portion of thesecond insulating film 52 which is located over the device region in theperipheral circuit area is removed by means of lithographic and etchingtechniques. As a result, a portion of the surface of the floating gateelectrode 53 is exposed to form an opening 61. Next, the control gateelectrode layer 54 is formed over the entire surface of the substrate.The control gate electrode layer 54 and the second insulating film 52are patterned. The control gate electrode layer 54 is lower inresistivity than the floating gate electrode 53 and preferably made of arefractory metal or refractory metal silicide.

[0040] Next, a third insulating film 62 is formed over the entiresurface of the substrate. Contact holes 63 are formed in portions of thethird insulating film 62 which are located above the device isolationregions 60 and interconnect lines 64 are then formed.

[0041] As a result, in the memory cell area, the interconnect line 64and the second electrode layer 54 are connected together and, in theperipheral circuit area, the interconnect line 64 and the floating gateelectrode 53 are connected through the second electrode layer 54.

[0042] Even in the structure which is realized by the gate preformationprocess, the device isolation insulating film 60 is formed to self-alignto the floating gate electrodes 53 and the top thereof is located at alevel above the Si substrate surface. That is, each active region in theSi substrate is surrounded by the higher device isolation insulatingfilm 60.

[0043] In the above-described structure, the lower gate layer(corresponding to the floating gate layer in the memory cell area) ofthe peripheral transistor is in contact with the sidewall of the deviceisolation insulating film 60 which is thick in comparison with that inthe conventional structure. In etching the lower gate layer, a portionof the gate material is left unetched on the sidewall of the deviceisolation insulating film as in the memory cell area, causing gateelectrodes to be short-circuited.

[0044] In optimizing the etching condition at a certain active regionaspect ratio, the optimum condition may be found. However, in theperipheral circuit area, unlike the memory cell area, it is verydifficult to set the optimum condition because various active regionaspect ratios are involved. In many cases, the peripheral transistor hasa low-voltage-operated logic circuit connected to it. Since the gateinsulating film of the peripheral transistor is normally small inthickness, the gate material is more prone to be left unetched. Inparticular, problems are involved in processing the stacked gates ofmemory cells and peripheral transistors at the same time.

[0045] As described above, the conventional semiconductor devices have aproblem of gate electrodes being short-circuited because a portion ofthe gate material is left unetched on the sidewall of the deviceisolation insulating film whose top is above the surface level of activeregions in the Si substrate.

BRIEF SUMMARY OF THE INVENTION

[0046] According to an aspect of the present invention, there isprovided a semiconductor device comprising: a plurality of trench typedevice isolation regions formed in a semiconductor substrate; aplurality of semiconductor active regions electrically isolated by thedevice isolation regions; a first electrode layer formed to self-alignto the semiconductor active regions; and a second electrode layer formedover the first electrode layer with an insulating film interposedtherebetween, the top of each of the device isolation regions beinglocated, in an area where the second electrode layer is present, at afirst level below the top of the first electrode layer and above thesurface of the semiconductor active regions and, in an area where thesecond electrode layer is not present, at a second level below the firstlevel, and the surface of the semiconductor active regions being atsubstantially the same level in the area where the second electrodelayer is present and in the area where the second electrode layer is notpresent.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

[0047]FIG. 1 is a plan view of a portion of the memory cell area of aNAND type of flash memory according to a first embodiment of the presentinvention;

[0048]FIG. 2 is a plan view of a portion of a transistor in theperipheral circuit area of the NAND type of flash memory according tothe first embodiment of the present invention;

[0049]FIG. 3A is a sectional view of the memory cell area takensubstantially along line A-A of FIG. 1 in the direction of gate width ata stage of manufacture of the flash memory;

[0050]FIG. 3B is a sectional view taken substantially along line B-B ofFIG. 1 in the direction of gate length at the same stage as in FIG. 3A;

[0051]FIG. 3C is a sectional view of the peripheral circuit area takensubstantially along line C-C of FIG. 2 in the direction of gate lengthat the same stage as in FIG. 3A;

[0052]FIG. 3D is a sectional view of the memory cell area takensubstantially along line D-D of FIG. 1 in the direction of gate width ata stage of manufacture of the flash memory;

[0053]FIGS. 4A, 4B and 4C are sectional views of the flash memory whichcorrespond to FIGS. 3A, 3B and 3C, respectively, after the step ofetching the gate mask material subsequent to the stage of FIGS. 3A-3D;

[0054]FIGS. 5A, 5B and 5C are sectional views of the flash memory whichcorrespond to FIGS. 3A, 3B and 3C, respectively, after the step ofetching the control gates subsequent to the stage of FIGS. 4A-4C;

[0055]FIGS. 6A, 6B and 6C are sectional views of the flash memory whichcorrespond to FIGS. 3A, 3B and 3C, respectively, after the step ofetching the second insulating film and the device isolation insulatingfilm subsequent to the stage of FIGS. 5A-5C;

[0056]FIGS. 7A, 7B and 7C are sectional views of the flash memory whichcorrespond to FIGS. 3A, 3B and 3C, respectively, after the step ofetching the floating gates subsequent to the stage of FIGS. 6A-6C;

[0057]FIGS. 8A, 8B and 8C are sectional views of the flash memory afterthe stage of FIGS. 4A-4C in accordance with another manufacturingmethod;

[0058]FIGS. 9A, 9B and 9C are sectional views of the flash memory afterthe stage of FIGS. 8A-8C;

[0059]FIGS. 10A, 10B and 10C are sectional views of the flash memoryafter the stage of FIGS. 9A-9C;

[0060]FIGS. 11A, 11B and 11C are sectional views of the flash memoryafter the stage of FIGS. 10A-10C;

[0061]FIGS. 12A, 12B and 12C are sectional views of the flash memoryafter the stage of FIGS. 9A-9C in accordance with still anothermanufacturing method;

[0062]FIGS. 13A, 13B and 13C are sectional views of the flash memoryafter the stage of FIGS. 12A-12C;

[0063]FIGS. 14A, 14B and 14C are sectional views of the flash memoryafter the stage of FIGS. 13A-13C;

[0064]FIG. 15A is a sectional view in the direction of gate width of thememory cell area of a flash memory according to a second embodiment ofthe present invention at a stage of manufacture of thereof;

[0065]FIG. 15B is a sectional view in the direction of gate length ofthe memory cell area at the same stage as in FIG. 15A;

[0066]FIG. 15C is a sectional view in the direction of gate length of aperipheral transistor of the flash memory at the same stage as in FIG.15A;

[0067]FIGS. 16A, 16B and 16C are sectional views of the flash memorywhich correspond to FIGS. 15A, 15B and 15C, respectively, after the stepof etching the gate mask material subsequent to the stage of FIGS.15A-15C;

[0068]FIGS. 17A, 17B and 17C are sectional views of the flash memorywhich correspond to FIGS. 15A, 15B and 15C, respectively, after the stepof etching the control gates subsequent to the stage of FIGS. 16A-16C;

[0069]FIG. 18A is a sectional view in the direction of gate width of thememory cell area of a conventional flash memory at a stage ofmanufacture of thereof;

[0070]FIG. 18B is a sectional view in the direction of gate length ofthe memory cell area of the conventional flash memory at the same stageas in FIG. 18A;

[0071]FIG. 18C is a sectional view in the direction of gate length of aperipheral transistor of the conventional flash memory at the same stageas in FIG. 18A;

[0072]FIGS. 19A, 19B and 19C are sectional views of the conventionalflash memory after the step of etching the gate mask material subsequentto the stage of FIGS. 18A-18C;

[0073]FIGS. 20A, 20B and 20C are sectional views of the conventionalflash memory after the step of etching the control gates subsequent tothe stage of FIGS. 19A-19C;

[0074]FIGS. 21A, 21B and 21C are sectional views of the conventionalflash memory and illustrate a step subsequent to the step of FIGS.20A-20C;

[0075]FIGS. 22A, 22B and 22C are sectional views of the conventionalflash memory after the stage of FIGS. 21A-21C;

[0076]FIG. 23 is a sectional view illustrating the memory cell area andthe peripheral circuit area of a semiconductor device which has beenproposed; and

[0077]FIG. 24 is a sectional view taken substantially along line B-B ofFIG. 1 after processing the first electrode layer.

DETAILED DESCRIPTION OF THE INVENTION

[0078] The preferred embodiments of the present invention will bedescribed hereinafter in detail with reference to the accompanyingdrawings.

FIRST EMBODIMENT

[0079]FIG. 1 is a plan view of a portion of the memory cell area of aNAND type of flash memory according to a first embodiment of the presentinvention, and FIG. 2 is a plan view of a transistor in the peripheralcircuit area of the flash memory.

[0080] In the memory cell array area shown in FIG. 1, a plurality ofNAND series are formed each of which comprises a series of memory cellswhich are connected in series with the source of one memory cell used asthe drain of the adjacent memory cell. In each NAND series, 1 denotesthe source or drain regions of memory cells, 2 denotes gate lines (wordlines) each including the upper control gate of a two-layer gate formedover the channel region of each memory cell with a gate insulating film(not shown) interposed therebetween, and 3 denotes device isolationregions each of which is adapted to isolate device regions (sourceregion, drain region, and channel region) in adjacent NAND series fromeach other.

[0081] In the peripheral circuit area shown in FIG. 2, 5 denotes thesource or drain region of a peripheral transistor and 6 denotes a gateline including the upper gate of a two-layer gate formed over thechannel region of the peripheral transistor with a gate insulating film(not shown) interposed therebetween. This peripheral transistor, whilehaving a two-layer gate, functions as a normal MOS transistor by theupper and lower gates being electrically connected together.

[0082] When the peripheral transistor is one of select transistorsconnected to both ends of a NAND series, one of the select transistorsshares one of its drain and source regions with the memory cell at thecorresponding end of the NAND series and has the other of its drain andsource regions connected to a bit line (not shown) via a bit linecontact. The other of the select transistors shares one of its drain andsource regions with the memory cell at the other end of the NAND seriesand has the other of its drain and source regions connected to a sourceline (not shown) via a source line contact.

[0083] As can be seen from FIG. 1, the gate line 2 extends in adirection that intersects the cell column. Thus, the device isolationregion 3 has portions each formed with a gate and portions with no gate.

[0084]FIG. 3A is a sectional view, taken substantially along line A-A ofFIG. 1 in the direction of gate width (word line direction), of thememory cell area of the flash memory according to the first embodimentof the present invention at a stage of manufacture thereof. FIG. 3B is asectional view, taken substantially along line B-B of FIG. 1 in thedirection of gate length, of the memory cell area at the same stage asin FIG. 3A. FIG. 3C is a sectional view of the peripheral circuit areataken substantially along line C-C of FIG. 2 in the direction of gatelength at the same stage as in FIG. 3A. FIG. 3D is a sectional view,taken substantially along line D-D of FIG. 1 in the direction of gatewidth (word line direction), of the memory cell area at the same stageas in FIG. 3A. FIGS. 4A to 4C through FIGS. 7A to 7C are sectional viewscorresponding to FIGS. 3A to 3C at various stages of manufacture. FIGS.3A-3D through FIGS. 7A-7C illustrate the sectional structures of theflash memory at sequential stages of manufacture thereof in the casewhere each of transistors in the memory cell and peripheral circuitareas shown in FIGS. 1 and 2 consists of a transistor having a floatinggate of one-layer structure.

[0085] First, as shown in FIGS. 3A-3D, an insulating film 11 is formedover the entire surface of a semiconductor substrate (Si substrate) 10and a first floating gate layer consisting of polysilicon is then formedover the first insulating film 11.

[0086] Next, the floating gate layer is patterned by means oflithographic and etching techniques to form floating gate electrodes 13.Subsequently, device isolation trenches are formed to self-align to thefloating gate electrodes 13 and an insulating film is deposited to asufficient thickness to fill up the trenches. After that, the insulatingfilm is planarized until the top of each of the floating gate electrodes13 is exposed, thereby forming device isolation regions 30. At thispoint, the top of each of the device isolation regions 30 is above theSi substrate surface level.

[0087] Next, the upper portion of each of the device isolation regions30 in the memory cell area is removed so that its top is located at alevel below the top of the floating gate electrodes 13. After that, asecond insulating film 12 (preferably made of a composite insulatingfilm including silicon nitride; for example, an ONO film) is formed overthe entire surface of the substrate. A portion of the second insulatingfilm 12 over each of device regions in the peripheral circuit area isremoved using lithographic and etching techniques. As a result, anopening is formed in the second insulating film 12 to expose a portionof the surface of each of the floating gate electrodes 13. Next, acontrol gate electrode layer (which is lower in resistivity than thefloating gate electrode 13 and preferably made of a refractory metal orrefractory metal silicide) 14 and a gate masking layer 31 are formed insequence over the entire surface of the substrate.

[0088] Next, a resist pattern (not shown) is formed using lithographictechniques and then the gate masking material layer 31 is patterned bymeans of RIE (Reactive Ion Etching) using the resist pattern as a maskto form a gate masking pattern 31 as shown in FIGS. 4A-4C.

[0089] Next, as shown in FIGS. 5A-5C, the control gate layer 14 ispatterned by means of RIE using the gate making pattern 31 as a mask toform control gates.

[0090] Next, as shown in FIGS. 6A-6C, the second insulating film 12 isetched away by means of RIE using the gate masking pattern 31 as a mask.At the same time, the device isolation insulating film 30 in the memorycell area is etched until its top reaches the same level as the firstinsulating film 11. At this point, the device isolation insulating film30 in the peripheral circuit area also undergoes etching with the resultthat its step height with respect to the first insulating film 11 isreduced.

[0091] Next, as shown in FIGS. 7A-7C, the floating gate electrode layer13 is etched by RIE using the gate masking pattern 31 as a mask underetching conditions of sufficient selectivity thereof to the gateinsulating film (the first insulating film) 11 to form stacked gatestructure in which the floating gate electrode 13 and the control gateelectrode 14 are stacked. In this stage, a two-layer gate structurewhich is the same as that as shown in FIG. 3D is left below the wordline in the direction of gate width in the memory cell area.

[0092] In etching the floating gate electrode layer 13, the step heightof the device isolation insulating film 30 in the peripheral circuitarea has been reduced as shown in FIG. 6C. When the floating gate layer13 of transistors in the peripheral circuit area is etched, therefore,it becomes difficult for a portion of the floating gate material to beleft unetched on the sidewall of the device isolation insulating film30.

[0093] After that, using standard manufacturing processes, thesource/drain regions of the cell transistors and the peripheraltransistors are formed, then a gate oxide film is formed on the surfaceof the active regions by thermal oxidation, a capping material is coatedonto the stacked gates, and an interlayer insulating film is formed overthe entire surface of the substrate. Contact holes are formed inpredetermined portions of the interlayer insulating film and theninterconnect lines are formed that connect to predetermined portions ofthe source/drain regions through the contact holes.

[0094] In the above manufacturing process, in forming stacked gates byetching the floating gate layer 13 and the control gate layer 14 in thememory cell area and the peripheral circuit area to self-align to thedevice isolation regions, after the control gate layer 14 is removeduntil the second insulating film 12 between the control and floatinggates is exposed, the device isolation insulating film 30 is also etchedto a desired height at the same time the second insulating film 12 isremoved. Thereby, the height of the device isolation insulating film 30(the distance between the surface of that insulating film and thesurface of active regions in the substrate 10) between stacked gates canbe reduced.

[0095] During etching of the device isolation insulating film 30, thefirst insulating film 11 in the memory cell area, formed on the surfaceof the substrate 10, on which no electrode layer is present is notremoved. Also, the substrate region underlying the electrode layer inthe memory cell area is protected by the lower gate layer (polysilicon)13 acting as floating gates.

[0096] Therefore, the substrate surface will not be directly struck withions during RIE. The substrate will not have impurities introduced intoit or will not be damaged. The substrate surface level will not belowered.

[0097] The NAND type flash memory having the gate structures shown inFIGS. 7A-7C is summarized as including trench type device isolationregions formed in a semiconductor substrate, semiconductor activeregions electrically isolated by the device isolation regions, and afirst electrode layer self-aligned to the device isolation regions. Thetop of the device isolation regions is located at a first level abovethe top of the semiconductor substrate in an area in which there is asecond electrode layer at a level above the first electrode layer andlocated at a second level which is below the first level but above thetop of the semiconductor substrate in an area in which the secondelectrode layer is not present (the device isolation regions betweenadjacent gates). The top of the semiconductor active regions is locatedat substantially the same level in both the area in which there is thesecond electrode layer and the area in which there is no secondelectrode layer.

[0098] Strictly speaking, as shown in FIG. 24, in the area in which thesecond electrode layer exists the top of the semiconductor activeregions is at a lower level than in the area in which no secondelectrode layer exists by the amount corresponding to the thickness of athermal oxide film formed after the processing of the first electrodelayer.

MODIFICATION OF THE MANUFACTURING PROCESS OF THE FIRST EMBODIMENT

[0099] In etching away the second insulating film 12 by means of RIEusing the gate masking pattern 31 as a mask as shown in FIGS. 6A-6C, aportion of the second insulating film may be left unetched on the sideof the floating gate layer 13. In this case, when etching the floatinggate layer 13 by RIE using the gate masking pattern 31 as a mask underetching conditions of sufficient selectivity to the gate insulating film(first insulating film) 11 in the process of FIGS. 7A-7C, a portion ofthe second insulating film may be left unetched in the form of a pillar.In that case, a problem will be encountered in forming a contact in theplace where the second insulating layer 12 is left unchanged. Amodification of the manufacturing process that circumvents this problemwill be described below.

[0100] First, as in the process shown in FIGS. 3A-3C and FIGS. 4A-4C,the first insulating film 11, the floating gate electrodes 13 and thedevice isolation insulating film 30 are formed on the semiconductorsubstrate (Si substrate) 10. Next, the upper portions of the deviceisolation regions 30 in the memory cell area are removed until their topis located at a level below the top of the floating gate electrodes 13.After that, the second insulating film 12 is formed over the entiresurface of the substrate and a portion of the second insulating film 12over the device region in the peripheral circuit area is removed toexpose a portion of the floating gate electrode 13. Next, the controlgate electrode layer 14 is formed over the entire surface of thesubstrate and then the gate masking layer is deposited and patterned toform the gate masking pattern 31.

[0101] Next, as shown in FIGS. 8A-8C, the control gate layer 14 isetched by RIE using the gate masking pattern 31 as a mask. At thispoint, the etch process is controlled so that some of the control gatelayer 14 is left on the device isolation regions 30.

[0102] Next, as shown in FIGS. 9A-9C, the second insulating layer 12 isetched away by RIE using the gate masking pattern 31 as a mask. At thispoint, the device isolation insulating film 30 in the peripheral circuitarea is also etched, lowering its height with respect to the firstinsulating film 11.

[0103] Next, as shown in FIGS. 10A-10C, the control gate layer 14 andthe floating gate layer 13 are etched by RIE using the gate maskingpattern 31 as a mask under etching conditions of high selectivity to thesecond insulating film 12 and the gate insulating film (first insulatingfilm) 11. Thereby, a stacked gate structure is obtained in which thefloating gate electrode 13 of one-layer structure and the control gateelectrode 14 are stacked. In this stage, a two-layer gate structurewhich is the same as that as shown in FIG. 3D is left below the wordline in the direction of gate width in the memory cell area.

[0104] In etching the control gate layer 14 and the floating gateelectrode layer 13, the step height of the device isolation insulatingfilm 30 in the peripheral circuit area has been reduced by the processof FIGS. 9A-9C. In etching the floating gate layer 13 of transistors inthe peripheral circuit area, therefore, it becomes difficult for aportion of the floating gate material to be left unetched on thesidewall of the device isolation insulating film 30.

[0105] Next, as shown in FIGS. 11A-11C, the second insulating film 12 onthe device isolation regions 30 in the memory cell area and the firstinsulating film 11 on the substrate surface in the memory cell area areetched away and the device isolation regions 30 in the memory cell areaare then etched so that their top is at substantially the same level asthe substrate surface.

[0106] According to the manufacturing process shown in FIGS. 3A-3C,FIGS. 4A-4C and FIGS. 8A-8C through 11A-11C, the aforementioned problemthat a portion of the second insulating film 12 is left unetched in theform of a pillar can be circumvented.

SECOND EMBODIMENT

[0107] In the modification of the first embodiment, in etching thedevice isolation regions 30 so that their top is at substantially thesame level as the substrate surface as shown in FIGS. 11A-11C, a problemarises in that the top of the semiconductor substrate 10 is notprotected by the first insulating film 11. A manufacturing process thatcircumvents that problem will be described as a second embodiment of thepresent invention.

[0108] First, as in the process shown in FIGS. 3A-3C and FIGS. 4A-4C,the first insulating film 11, the floating gate electrodes 13 and thedevice isolation insulating film 30 are formed on the semiconductorsubstrate (Si substrate) 10. Next, the upper portions of the deviceisolation regions 30 in the memory cell area are removed until their topis located at a level below the top of the floating gate electrodes 13.After that, the second insulating film 12 is formed over the entiresurface of the substrate and a portion of the second insulating film 12over the device regions in the peripheral circuit area is removed toform an opening that exposes a portion of the floating gate electrode13. Next, the control gate electrode layer 14 is formed over the entiresurface of the substrate and then the gate masking layer is depositedand patterned to form the gate masking pattern 31.

[0109] Next, as shown in FIGS. 8A-8C, the control gate layer 14 isetched by RIE using the gate masking pattern 31 as a mask. At thispoint, the etch step is controlled so that some of the control gatelayer 14 is left on the device isolation regions 30.

[0110] Next, as shown in FIGS. 9A-9C, the second insulating layer 12 isetched away by RIE using the gate masking pattern 31 as a mask. At thispoint, the device isolation insulating film 30 in the peripheral circuitarea is also etched so that its top is located at a level midway betweenthe floating gate layer 13 and the first insulating film 11, loweringits height with respect to the first insulating film 11.

[0111] Next, as shown in FIGS. 12A-12C, the floating gate layer 13 isetched by RIE using the gate masking pattern 31 as a mask under etchingconditions of high selectivity to the second insulating film 12. At thispoint, the etching of the floating gate layer 13 is stopped when itssurface reaches a level lower than the surface of the second insulatingfilm 12 on the device isolation insulating film 30 in the memory cellarea (that is, a level a little lower than the surface of the deviceisolation insulating film 30 in the peripheral circuit area).

[0112] Next, as shown in FIGS. 13A-13C, the second insulating film 12 onthe device isolation insulating film 30 in the memory cell area isetched away and the device isolation insulating film 30 in the memorycell area is etched until its surface comes to the same level as thesurface of the first insulating film 11. In the peripheral circuit area,the device isolation insulating film 30 is etched until its surfacecomes to a level a little lower than the surface of the floating gateelectrode 13. During this etching process, the top surface of thesemiconductor substrate 10 is protected by the floating gate layer 13and the first insulating film 11.

[0113] Next, as shown in FIGS. 14A-14C, the floating gate layer 13 isetched by means of RIE using the gate masking pattern 31 as a mask underetching conditions of high selectivity to the first insulating film 11.Thereby, a stacked gate structure is obtained in which the floating gateelectrode 13 of one-layer structure and the control gate electrode 14are stacked. In this stage, a two-layer gate structure which is the sameas that as shown in FIG. 3D is left below each of the word lines in thedirection of gate width in the memory cell area.

[0114] After that, through standard manufacturing processes, thesource/drain regions of the cell transistors and the peripheraltransistors are formed, then a gate oxide film is formed on the surfaceof the active regions by thermal oxidation, a capping material is coatedonto the stacked gates, and an interlayer insulating film is formed overthe entire surface of the substrate. Contact holes are formed inpredetermined portions of the interlayer insulating film and theninterconnect lines are formed that connect to predetermined portions ofthe source/drain regions through the contact holes.

[0115] According to the manufacturing process shown in FIGS. 3A-3C,FIGS. 4A-4C, FIGS. 9A-9C and FIGS. 12A-12C through FIGS. 14A-14C, thestep height of the device isolation insulating film 30 in the peripheralcircuit area has been reduced when the floating gate electrode layer 13of the transistors in the peripheral circuit area is etched. Therefore,it becomes difficult for a portion of the floating gate material to beleft unetched on the sidewall of the device isolation insulating film30. Also, as shown in FIGS. 14A-14C, in etching the floating gate layer13 by means of RIE under etching conditions of high selectivity to thefirst insulating film 11, the top of the semiconductor substrate inportions of the memory cell area in which no electrode layer is presentis protected by the first insulating film 11. The substrate regionsunderlying the electrode layers in the memory cell area are protected bythe lowermost layer of polysilicon acting as the floating gateelectrodes 13. Therefore, the substrate surface will not be directlystruck with ions during RIE. The substrate will not have impuritiesintroduced into it or will not be damaged. The substrate surface levelwill not be lowered.

THIRD EMBODIMENT

[0116] Although the first and second embodiments have been described asusing the floating gate electrode layer of one-layer structure, thethird embodiment uses a floating gate electrode layer of two-layerstructure.

[0117] FIGS. 15A-15C through FIGS. 17A-17C illustrate sectionalstructures of portions of the memory cell area and a transistor of theperipheral circuit area in a NAND type flash memory according to thethird embodiment of the present invention at stages of manufacturethereof. FIGS. 15A, 16A and 17A are sectional views, in the order ofsteps of manufacture, of the memory cell area taken along line A-A ofFIG. 1 in the direction of gate width (the direction of word line).FIGS. 15B, 16B and 17B are sectional views, in the order of steps ofmanufacture, of the memory cell area taken along line B-B of FIG. 1 inthe direction of gate length. FIGS. 15C, 16C and 17C are sectionalviews, in the order of steps of manufacture, of the peripheral circuitarea taken along line C-C of FIG. 1 in the direction of gate length.

[0118] In the third embodiment, the processes described with referenceto FIGS. 18A-18C through FIGS. 21A-21C are followed by the processesshown in FIGS. 15A-15C through FIGS. 17A-17C.

[0119] First, as shown in FIGS. 18A-18C, the first insulating film 11,the first (lower) floating gate layer 13 a, the device isolation regions30, the second (upper) floating gate layer 13 b, the second insulatingfilm 12, the control gate layer 14 and the gate masking material layer31 are formed. Next, as shown in FIGS. 19A-19C, the gate masking pattern31 is formed. Next, as shown in FIGS. 20A-20C, the control gate layer 14is etched. Next, as shown in FIGS. 21A-21C, the second insulating film12 is etched.

[0120] Next, as shown in FIGS. 15A-15C, the second floating gate layer13 b and the first floating gate layer 13 a are etched using the gatemasking pattern 31 as a mask. In this case, although the second floatinggate layer 13 b is etched thoroughly, the first floating gate layer 13 ais etched until its top reaches a level midway between the top of thedevice isolation region 30 and the surface of the first insulating film11. In this state, the top of the device isolation regions is located ata level above the Si substrate surface (active region surface). A lowstep is formed between the top of the device isolation region 30 and thetop of the remainder of the first floating gate layer 13 a.

[0121] Next, as shown in FIGS. 16A-16C, the device isolation regions 30are etched until its top reaches the same level as the first insulatingfilm 11.

[0122] Next, as shown in FIGS. 17A-17C, the remainder of the firstfloating gate layer 13 a is etched away by means of RIE using the gatemasking pattern 31 as a mask. Thereby, a stacked gate structure isobtained in which the floating gate electrode of two-layer structure andthe control gate electrode are stacked. In this stage, a two-layer gatestructure which is the same as that as shown in FIG. 3D is left belowthe word lines in the direction of gate width in the memory cell area.

[0123] Thereafter, the same processes as in the first embodiment areperformed to finish the semiconductor device.

[0124] The third embodiment also will provide substantially the sameadvantages as the first embodiment from substantially the same reasons.

[0125] According to the present invention, as described above, asemiconductor device and a method of manufacture thereof are providedwhich can keep a portion of the lower gate material from being leftunetched on the sidewall of the device isolation insulating film andtherefore prevent gate electrodes from being short-circuited by reducingthe distance between the top of the trench type device isolationinsulating film, formed to self-align to at least the lower gate ofstacked gates, and the surface of the semiconductor substrate prior tothe step of etching away the lower gate.

[0126] In addition, a semiconductor device in which transistors in thememory cell area and the peripheral circuit area have a stacked gatestructure and a method of manufacture thereof are provided which, inetching away the floating gates of the memory cell and peripheraltransistors, can keep a portion of the lower gate material from beingleft unetched on the sidewall of the device isolation insulating filmand therefore prevent gate electrodes from being short-circuited.

What is claimed is:
 1. A semiconductor device comprising: a plurality oftrench type device isolation regions formed in a semiconductorsubstrate; a plurality of semiconductor active regions electricallyisolated by the device isolation regions; a first electrode layerself-aligned to the trench type device isolation regions; and a secondelectrode layer formed over the first electrode layer with an insulatingfilm interposed therebetween, the top of each of the device isolationregions being located, in an area where the second electrode layer ispresent, at a first level below the top of the first electrode layer andabove the surface of the semiconductor active regions and, in an areawhere the second electrode layer is not present, at a second level belowthe first level, and the surface of the semiconductor active regionsbeing at substantially the same level in the area where the secondelectrode layer is present and in the area where the second electrodelayer is not present.
 2. The semiconductor device according to claim 1,wherein the semiconductor device is a nonvolatile semiconductor memoryand, in the memory cell area in which memory cell transistors areformed, the first and second electrode layers constitute floating andcontrol gates, respectively, of each of the memory cell transistors. 3.The semiconductor device according to claim 2, wherein, in each of thememory cell area and the peripheral circuit area in which peripheraltransistors are formed, the top of the device isolation regions in thearea in which no second electrode layer is present is located at thesecond level.
 4. The semiconductor device according to claim 3, wherein,in the peripheral circuit area, at least a portion of the firstelectrode layer is connected with the second electrode layer, and thefirst and second electrode layers form the gate electrode of each of theperipheral transistors.
 5. A semiconductor device comprising: aplurality of trench type device isolation regions formed in asemiconductor substrate; a plurality of semiconductor active regionselectrically isolated by the device isolation regions; a first electrodelayer self-aligned to the trench type device isolation regions; and asecond electrode layer formed over the first electrode layer with aninsulating film interposed therebetween, the top of each of the deviceisolation regions being located, in an area where the second electrodelayer is present, at a first level below the top of the first electrodelayer and above the surface of the semiconductor active regions and, inan area where the second electrode layer is not present, at a secondlevel below the first level, and the surface of the semiconductor activeregions in the area where no second electrode layer is present beinglocated at a level lower than in the area where the second electrodelayer is present by the thickness of a thermal oxide film formed afterthe processing of the first electrode layer.
 6. The semiconductor deviceaccording to claim 5, wherein the semiconductor device is a nonvolatilesemiconductor memory and, in the memory cell area in which memory celltransistors are formed, the first and second electrode layers constitutefloating and control gates, respectively, of each of the memory celltransistors.
 7. The semiconductor device according to claim 6, wherein,in each of the memory cell area and the peripheral circuit area in whichperipheral transistors are formed, the top of the device isolationregions in the area in which no second electrode layer is present islocated at the second level.
 8. The semiconductor device according toclaim 7, wherein, in the peripheral circuit area, at least a portion ofthe first electrode layer is connected with the second electrode layer,and the first and second electrode layers form the gate electrode ofeach of the peripheral transistors.
 9. A nonvolatile semiconductormemory having a memory cell area in which memory cell transistors areformed and a peripheral circuit area in which peripheral transistors areformed, comprising: a plurality of trench type device isolation regionsformed in a semiconductor substrate; a plurality of semiconductor activeregions electrically isolated by the device isolation regions; a firstlayer of floating electrodes self-aligned to the trench type deviceisolation regions; a second layer of floating electrodes formed on thefirst layer of floating electrodes to overlap with the device isolationregions; and a layer of control electrodes formed over the second layerof floating gates with an interelectrode insulating film interposedtherebetween, the top of each of the device isolation regions beinglocated, in an area where the control electrode layer is present, at afirst level below the top of the second floating gate electrode layerand above the surface of the semiconductor active regions and, in anarea where the control electrode layer is not present, at a second levelbelow the first level, and the surface of the semiconductor activeregions being located at substantially the same level in the area wherethe control electrode layer is present and in the area where the controlelectrode layer is not present.
 10. A method of manufacturing anonvolatile semiconductor memory having a memory cell area in whichmemory cell transistors are formed and a peripheral circuit area inwhich peripheral transistors are formed, comprising: forming a firstinsulating film over the entire surface of a semiconductor substrate;forming a first electrode layer over the entire surface of the firstinsulating film; selectively removing the first electrode layer, thefirst insulating film and the semiconductor substrate; forming deviceisolation regions to self-align to the first electrode layer; etchingthe device isolation regions until the top of the device isolationregions in the memory cell area reaches a level midway between thesurface of the first electrode layer and the surface of the firstinsulating film; forming a second insulating film over the entiresurface of the semiconductor substrate; removing a portion of the secondinsulating film over each of the peripheral transistors of theperipheral circuit area to form an opening that exposes a portion of thefirst electrode layer; forming a second electrode layer over the entiresurface of the semiconductor substrate; forming a gate masking patternon the second electrode layer; patterning the second electrode layerusing the gate masking pattern as a mask; selectively etching away thesecond insulating film using the gate masking pattern as a mask; etchingthe device isolation regions in the memory cell area until their topreaches the same level as the top of the first insulating film; etchingthe device isolation regions in the peripheral circuit area until theirtop reaches a level midway between the surface of the first electrodelayer and the surface of the first insulating film; and selectivelyetching away the first electrode layer using the gate masking pattern asa mask.
 11. The method according to claim 10, wherein, in the memorycell area, the first and second electrode layers form the floating gateand the control gate, respectively, of each of the memory celltransistors, and, in the peripheral circuit area, the first and secondelectrode layers form the gate of each of the peripheral transistors.12. A method of manufacturing a nonvolatile semiconductor memory havinga memory cell area in which memory cell transistors are formed and aperipheral circuit area in which peripheral transistors are formed,comprising: forming a first insulating film over the entire surface of asemiconductor substrate; forming a first electrode layer over the entiresurface of the first insulating film; selectively removing the firstelectrode layer, the first insulating film and the semiconductorsubstrate; forming device isolation regions to self-align to the firstelectrode layer; etching the device isolation regions until the top ofthe device isolation regions in the memory cell area reaches a levelmidway between the surface of the first electrode layer and the surfaceof the first insulating film; forming a second insulating film over theentire surface of the semiconductor substrate; removing a portion of thesecond insulating film over each of the peripheral transistors of theperipheral circuit area to form an opening that exposes a portion of theunderlying first electrode layer; forming a second electrode layer overthe entire surface of the semiconductor substrate; forming a gatemasking pattern on the second electrode layer; patterning the secondelectrode layer using the gate masking pattern as a mask so that itsportion is left over the device isolation regions in the memory cellarea; selectively etching away the second insulating film using the gatemasking pattern as a mask and the underlying patterned second electrodelayer; etching the device isolation regions in the peripheral circuitcell area until their top reaches a level midway between the surface ofthe first electrode layer and the surface of the first insulating film;etching the second electrode layer and the first electrode layer usingthe gate masking pattern as a mask under etching conditions of highselectivity to the second insulating film until the top of the firstelectrode layer reaches a level below the surface of the secondinsulating film in the memory cell area; selectively etching away thesecond insulating film; etching the device isolation regions until theirtop reaches the same level as the surface of the first insulating film;and etching the first electrode layer using the gate masking pattern asa mask under etching conditions-of high selectivity to the firstinsulating film to form stacked gates each of which is comprised of thefirst electrode of one-layer structure and the second electrode layer.13. A method of manufacturing a nonvolatile semiconductor memory havinga memory cell area in which memory cell transistors are formed and aperipheral circuit area in which peripheral transistors are formed,comprising: forming a first insulating film over the entire surface of asemiconductor substrate; forming a first floating gate electrode layerover the entire surface of the first insulating film; selectivelyremoving the first floating gate electrode layer, the first insulatingfilm and the semiconductor substrate; forming device isolation regionsto self-align to the first electrode layer, the top of the deviceisolation regions being at the same level as the surface of the firstfloating gate electrode layer; forming a second floating gate electrodelayer on the first floating gate electrode layer; forming a control gateelectrode layer over the entire surface of the semiconductor substrate;forming a gate masking pattern on the control electrode layer;patterning the control electrode layer using the gate masking pattern asa mask; etching away the second insulating film using the gate maskingpattern as a mask; etching away the second floating gate electrode layerusing the gate masking pattern as a mask; etching the first floatinggate electrode layer until its top reaches a level midway between thetop of the device isolation regions and the surface of the firstinsulating film; etching the device isolation regions using the gatemasking pattern as a mask until their top reaches the same level as thesurface of the first insulating film; and etching away the remainder ofthe first floating electrode layer using the gate masking pattern as amask.